Wide Bandgap Process Development Engineer

Texas Instruments • Dallas, TX

4d

About The Position

Change the world. Love your job. TI is seeking an innovative and highly skilled device physics and process engineer to join our cutting-edge central research group in Kilby Labs. This role offers the unique opportunity to work at the forefront of developing new process technology in wide-bandgap and other materials to redefine the power electronics landscape. You will be instrumental in developing and scaling power process technologies, including GaN epitaxial development and innovations. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability. About the job This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's central research labs, Kilby Labs, the role involves close collaboration with fab/manufacturing, business units, and the Advanced Technology Development (ATD) group. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to: GaN device simulations (TCAD), device design, layout, lead tape-outs Novel Epitaxial development: contributing innovative ideas for unlocking and enabling future wide-bandgap capabilities for TI, but also hands on driving EPI reactors for running experiments to validate your ideas. Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges Collaboration with fab/manufacturing engineers to ensure device manufacturability Collaboration with reliability engineers to meet device reliability requirements Failure root-cause investigation for device/process/reliability/yield improvement The ideal candidate is expected to have a strong understanding of the following: Power FETs and other relevant semiconductor device physics Innovative and creative background on epitaxial development Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics Electrical and materials characterization methodologies and statistical data analysis Strong hands-on lab experience and excellent problem solving skills are also needed Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams

Requirements

• Master's in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
• 10+ years of hands-on experience in GaN or compound semiconductor device/process development (can include postdoc or industry experience)
• Strong knowledge of semiconductor processing, especially in III-V materials
• Experience with process integration, DOE planning, electrical characterization, and failure analysis
• Proven ability to work across functional teams and drive results in a fast-paced R&D environment
• Power FETs and other relevant semiconductor device physics
• Innovative and creative background on epitaxial development
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis
• Strong hands-on lab experience and excellent problem solving skills
• Excellent verbal and written communication skills

Nice To Haves

• PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
• 10+ years of experience in GaN-based electronic device development
• Proven experience developing novel epitaxial flows for GaN with hands on epi-reactor experience
• Familiarity with GaN-on-Si technology for power switching applications
• Experience with fab tools and process modules/Integration
• Strong communication and data analysis skills
• Knowledge of device physics, reliability mechanisms, and packaging interaction is a plus.
• Ability to work in teams and collaborate effectively with people in different functions
• Ability to take the initiative and drive for results
• Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly

Responsibilities

• GaN device simulations (TCAD), device design, layout, lead tape-outs
• Novel Epitaxial development: contributing innovative ideas for unlocking and enabling future wide-bandgap capabilities for TI, but also hands on driving EPI reactors for running experiments to validate your ideas.
• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvement

What This Job Offers

• Job Type: Full-time
• Career Level: Mid Level
• Number of Employees: 5,001-10,000 employees