Technology Development Intern, RF GaN (Summer 2026)

GlobalFoundries

113d • $20 - $40

About The Position

GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you’ll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Requirements

• Actively pursuing a Masters or Ph.D. in Electrical Engineering or Solid State Physics or related field.
• A basic knowledge of modern semiconductor device physics and device characterization.
• Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication.
• Must have at least an overall 3.0 GPA and be in good academic standing.
• Fluency in English (Written & Verbal).
• Ability to work at least 40 hours per week during the internship.

Nice To Haves

• Prior related internship or co-op experience.
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills.
• Strong written and verbal communication skills.
• Strong planning & organizational skills.
• Educational experience in modern device physics.
• Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices.
• Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF.
• Experience in fabrication and electrical characterization of GaN HEMT devices.

Responsibilities

• Innovate with device, test, and process integration team members in defining, designing, and setting up process modules and integration.
• Collaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology.
• Collaborate with various Fab9 engineering teams outside of the technology development team to facilitate and achieve program success.
• Collaborate with teams on physical and electrical device simulation and final characterization analysis.
• Support technology development qualification milestones from conception through manufacturing installation.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Benefits

• Mentorship opportunities.
• Professional development opportunities.
• Networking with executives.

What This Job Offers

• Career Level: Intern
• Education Level: Master's degree
• Number of Employees: 5,001-10,000 employees