SiC Power Device Research Scientist - Design

Wolfspeed•Durham, NC

25d

About The Position

At Wolfspeed, we do amazing things in a human way. We know that the achievements of our organization are due to the passion, hard work and creativity of our employees. We celebrate different perspectives to foster excellence across our organization, and our goal is to make diversity a foundation of what we do. We are proudly building an environment where you can bring your authentic self to work. Enjoy doing things that people say can’t be done? Innovation is at the center of everything we do. Hate red tape? We remove roadblocks instead of creating them. Working parent? We provide childcare assistance and paid parental leave. Student? We offer continuing education assistance. Looking for community? There are many ways to get involved, from Employee Resource Groups to local outreach. Here’s the Gist In this position within Wolfspeed’s Power Device Technology Development department, you will be leading device development projects for next-generation silicon carbide (SiC) power devices (MOSFETs, JFETs, JBS diodes and high voltage IGBTs) with an emphasis on power MOSFETs. You will be participating in all aspects of silicon carbide power device development, with a focus on device design efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, Reliability, and New Product Introduction to master understanding of the full product life cycle of the new technologies.

Requirements

Ph.D. in Electrical Engineering, Solid State Physics, or closely related area
5 – 10 years of industrial experience in power device development preferred
Experience in low voltage (~ 100V) discrete silicon power MOSFET development preferred
Strong understanding in semiconductor device physics
Experience in hands-on characterization of power semiconductor devices
Working knowledge of commercial TCAD tools
Working knowledge of CAD layout tools
Understanding of semiconductor fabrication processes and process integration
Understanding of semiconductor device characterization methods
Design of experiments and data interpretation skills
Ability to work in a team setting
Excellent analytical and problem-solving skills
Excellent communications/presentations skills
Must be authorized to work in the USA

Responsibilities

Lead device development efforts in high performance SiC power switching devices
Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors
Explore new device concepts for future generation of SiC power devices
Perform Design of Experiment (DoE) activities for performance optimization of commercial SiC power devices
Provide optimum device designs with considerations to manufacturability and reliability
Hands on characterization experimental devices
Data analysis of experimental data
Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications.
Prepare technical presentations and papers for internal meetings, as well as conferences and journals