SiGe HBT Device Modelling Engineer (2026 New College Graduate)

GlobalFoundries

92d • $65,400 - $145,800

About The Position

GLOBALFOUNDRIES (GF) is seeking Compact Modelling Engineer to develop SiGe bipolar transistor models actively used by clients to design Radio Frequency (RF), mm-wave integrated circuits (ICs) using next-generation GF RF technologies. The role demands familiarity with SiGe bipolar transistor device engineering, semiconductor manufacturing technologies & processes. Strong device physics knowledge to enable developing physics-based, geometry-scalable, mathematical models. Familiarity with industry standard models such as Gummel-Poon, Vertical Bipolar Intercompany (VBIC), and High Current Model (HiCUM) are desired to obtain accurate SiGe bipolar transistor characteristics suitable for high frequency applications. Candidate should demonstrate familiarity of Electronic Design Automation (EDA) tools -such as Cadence Virtuoso, Advance Design System (ADS) and simulation software is desired. Familiarity with device characterization using Direct Current (DC), Scattering parameter and RF characterization is highly desirable. Familiarity of parameters extraction from measurement data, their implementation in Spectre and/or Verilog-A model cards, & their effect on simulation results and dependency on model to silicon hardware correlation. Mastery of verbal and written communication are a must to successfully interact with highly technical teams, engage with highly versed clients and to provide documentation of the highest quality. Fluency in shell scripting, multi-paradigm (Matlab/R) and high-level programming languages(Python/Perl/Lisp) are preferred additions. Candidate will be a member of an established technical team, driven by collaborative innovation, creative problem solving and high-performance culture. Demonstrated analytical & positive thinking, desire to innovate, accountability for your work and people skills are all foundational.

Requirements

• Graduating with Ph.D. in Electrical Engineering, Microelectronics or related field from an accredited degree program
• Must have at least an overall 3.5 GPA and proven good academic standing
• Fluency in English (Written & Verbal)

Nice To Haves

• Semiconductor device physics / characterization knowledge
• Device Compact model extraction / development experience
• Familiarity with industry standard compact models: Gummel-Poon, Vertical Bipolar Intercompany (VBIC), and High Current Model (HiCUM)
• Proficient with design simulation tools such as Cadence Spectre or Keysight ADS performing DC, S-parameter, transient, large signal simulations
• Design Layout experience using the Cadence Virtuosa or ADS flow
• Data analysis and problem solving
• Fluency in shell scripting, multi-paradigm (Matlab/R) and high-level programming languages(Python/Perl/Lisp)
• Prior related internship or co-op experience
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity
• Strong written and verbal communication skills
• Strong planning & organizational skills

Responsibilities

• Developing semiconductor device compact models
• Defining device characterization design structures for device model parameter extraction
• Device Characterization and data analysis
• Device Model to Hardware correlation (model accuracy/quality assurance checking)
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Benefits

• Equal opportunity in the workplace
• Cultural diversity within the company enhances its business potential

What This Job Offers

• Career Level: Entry Level
• Education Level: Ph.D. or professional degree
• Number of Employees: 5,001-10,000 employees