GLOBALFOUNDRIES (GF) is seeking Compact Modelling Engineer to develop SiGe bipolar transistor models actively used by clients to design Radio Frequency (RF), mm-wave integrated circuits (ICs) using next-generation GF RF technologies. The role demands familiarity with SiGe bipolar transistor device engineering, semiconductor manufacturing technologies & processes. Strong device physics knowledge to enable developing physics-based, geometry-scalable, mathematical models. Familiarity with industry standard models such as Gummel-Poon, Vertical Bipolar Intercompany (VBIC), and High Current Model (HiCUM) are desired to obtain accurate SiGe bipolar transistor characteristics suitable for high frequency applications. Candidate should demonstrate familiarity of Electronic Design Automation (EDA) tools -such as Cadence Virtuoso, Advance Design System (ADS) and simulation software is desired. Familiarity with device characterization using Direct Current (DC), Scattering parameter and RF characterization is highly desirable. Familiarity of parameters extraction from measurement data, their implementation in Spectre and/or Verilog-A model cards, & their effect on simulation results and dependency on model to silicon hardware correlation. Mastery of verbal and written communication are a must to successfully interact with highly technical teams, engage with highly versed clients and to provide documentation of the highest quality. Fluency in shell scripting, multi-paradigm (Matlab/R) and high-level programming languages(Python/Perl/Lisp) are preferred additions. Candidate will be a member of an established technical team, driven by collaborative innovation, creative problem solving and high-performance culture. Demonstrated analytical & positive thinking, desire to innovate, accountability for your work and people skills are all foundational.