Senior RF GaN Devices Engineer

HRL • Malibu, CA

100d • $145,745 - $186,688

About The Position

HRL Laboratories offers an industry leading suite of high performance GaN based device technologies and is seeking to expand our RF Devices team. The successful candidate will help define the next generation of GaN based semiconductor devices and introduce new process capabilities.

Requirements

• PhD in electrical engineering or related field with 5+ years of post-graduate experience in GaN HEMTs.
• Practical and theoretical understanding of RF electronic devices.
• Experience with TCAD simulations in commercial packages.
• Understanding of device reliability.
• Deep understanding of device fabrication methods and the impact on device performance and yield.
• Proven track record of leading experimental electronic device research and development programs.
• Hands-on experience with writing, winning and executing research projects.
• Must have authored scientific publications and given technical presentations.
• Able to pursue difficult technical subjects independently, design experiments, analyze data, and provide solutions.
• Able to produce technical presentations and reports & communicate effectively with colleagues and customers.
• Excellent written and verbal communications skills.

Responsibilities

• Support to conceive, develop, and execute device research programs that push GaN and related materials into higher frequency, power and efficiency ranges.
• Design new epitaxial structures to be grown by MBE or MOCVD.
• Design new fabrication methods to be fabricated within our onsite fab to improve device performance and yield.
• Develop devices for flip chip or 3DHI integration requirements.
• Review, summarize and interpret RF measurement data, and create actionable learning for device or design improvements.
• Interface closely with internal and government customers to shape future device efforts.
• Work collaboratively within a team environment, and to mentor junior staff.
• Work with internal circuit designers and subsystem designers to understand device requirements to support next-generation electronic system and subsystem designs.

Benefits

• Base salary range for this full-time position is $145,745 - $186,688 + bonus + benefits.

What This Job Offers

• Job Type: Full-time
• Career Level: Senior
• Industry: Professional, Scientific, and Technical Services
• Education Level: Ph.D. or professional degree
• Number of Employees: 1,001-5,000 employees