RF Power Amplifier Design Intern

MACOM • Morgan Hill, CA

80d • $29 - $34

About The Position

As a member of the RF Power Product Design team, the RF Power Amplifier Design Intern will work alongside experienced engineers providing mentoring, guidance, and introductions to colleagues. The design intern will be working at the Morgan Hill Design Center alongside a highly knowledgeable team of RF engineers and will initially be tasked with RF power device design of MACOM's high power GaN transistor products geared towards, Multi Market, Base Station and 5G markets. As an intern you will learn the handling RF devices, biasing devices, capturing accurate RF data and EM simulation. A follow-on activity will task the intern to design an impedance matching network for an amplifier, using either MWO or ADS design software, in order to match the device to a 50 ohm environment. The intern will be expected to layout the impedance matching network in AutoCAD, have the device sample and amplifier fabricated and will be tasked to assemble, solder components and tune the circuit on the RF bench. Performance data of the measured amplifier will then be compared to the design simulation. This Internship with MACOM will help the Intern to gain valuable work experience in a key discipline, build professional relationships, and take ownership of a business-critical project.

Requirements

• Working toward a Bachelor's or Master's degree in Electrical Engineering.
• Strong interest in RF/microwave and semiconductor devices; relevant coursework and/or lab work a must.
• Willing to work hands-on in the lab to test RF devices and assemble and test RF amplifiers.
• Attention to detail and strong documentation skills.

Nice To Haves

• Understanding of Linear Circuit Theory.
• Understanding of Transmission-line Theory.
• Impedance Matching/Transform, Smith Chart.
• RF design software including ADS, MWO.
• 2.5D or 3D EM simulation.
• RF passive/active circuit design.
• Doherty Power Amplifier.

Responsibilities

• Work alongside experienced engineers providing mentoring and guidance.
• Design RF power devices for high power GaN transistor products.
• Handle RF devices and biasing devices.
• Capture accurate RF data and perform EM simulation.
• Design an impedance matching network for an amplifier using MWO or ADS.
• Layout the impedance matching network in AutoCAD.
• Fabricate the device sample and amplifier.
• Assemble, solder components, and tune the circuit on the RF bench.
• Compare performance data of the measured amplifier to design simulation.

Benefits

• Gain hands-on experience.
• Receive excellent training and ongoing supervision.
• Attend networking/social events.
• Attend and present at Poster Session about each Intern's project successes and pitfalls.
• Receive formal, written feedback.

What This Job Offers

• Career Level: Intern
• Industry: Publishing Industries
• Education Level: Bachelor's degree
• Number of Employees: 1,001-5,000 employees