Product Characterization Engineer Intern

NAVITAS SEMICONDUCTOR USA, INC. • Torrance, CA

8d • $25 - $35

About The Position

We are seeking a highly motivated graduate student specializing in wide bandgap (WBG) device physics to join our advanced technology team. This role offers a unique opportunity to collaborate directly with leading semiconductor foundries to develop and characterize next-generation GaN and SiC power devices that will enable higher efficiency, power density, and reliability in data center, industrial, and AI infrastructure. This position bridges fundamental device physics and real-world power electronics applications, allowing you to see your research transition from wafer level to deployed system.

Requirements

• Pursuing an MS or PhD in Electrical Engineering, Applied Physics, Materials Science, or a related field
• Research focus in wide bandgap semiconductor device physics (GaN, SiC, or related materials)
• Strong understanding of semiconductor device theory, including transport, breakdown, trapping, and reliability mechanisms
• Experience with electrical device characterization and data analysis
• Ability to communicate complex physics concepts across multidisciplinary teams

Nice To Haves

• Experience with power device structures (HEMTs, MOSFETs, diodes, vertical devices)
• Familiarity with foundry processes, TCAD simulation, or wafer-level characterization
• Exposure to reliability physics, degradation mechanisms, or failure analysis
• Interest in seeing research translated into commercially deployed products

Responsibilities

• Collaborate with internal engineering teams and industry-leading foundry partners to develop and evaluate next-generation GaN and SiC power devices
• Perform electrical and physical characterization of WBG devices, correlating measured behavior with underlying device structures, materials, and process technologies
• Support characterization and development of: 650 V GaN 100 V GaN 3.3 kV SiC
• Analyze device performance tradeoffs including breakdown voltage, switching speed, conduction losses, reliability, and thermal behavior
• Work closely with power electronics and application engineers to translate device-level innovations into system-level performance improvements
• Contribute to technology roadmaps, experimental design, and data-driven recommendations for future device generations
• Support failure analysis, reliability testing, and lifetime modeling in collaboration with foundry and internal teams
• Document results in technical reports, presentations, and (where appropriate) publications or patents

Benefits

• Direct collaboration with top-tier global foundries shaping the future of GaN and SiC technology
• Opportunity to influence cutting-edge devices used in AI data centers, industrial automation, and high-efficiency power systems
• Work at the intersection of fundamental physics and product-driven engineering
• Mentorship from experts spanning device physics, process technology, and power electronics
• Flexible work structure compatible with graduate research and coursework

What This Job Offers

• Career Level: Intern