Process Development Engineer

Texas InstrumentsDallas, TX
205d

About The Position

Being responsible for SRAM memory device development, you will join a small development team with talented and driven contributors to deliver high-density, production-worthy, reliable memory technology on schedule and within budget. You will work with development wafer fabrication facilities to manage device definition, creation, demonstration, and delivery and work with multiple design groups to capture requirements and to evaluate tradeoffs providing a unique opportunity to create SRAM memory solutions for TI customers. Highly visible position interacting with multiple business groups, development groups, and fabrication facilities. You will be involved in innovative pathfinding projects. Opening is within Advanced Technology Development Department of the Technology and Manufacturing Group. Responsibilities include SRAM bitcell design, process integration, SWR/DOE (experiments) definition and generation, test structure definition, characterization, data analysis, design rule generation, process control document generation, device characterization, device simulation, driving SRAM yield and qualification.

Responsibilities

  • SRAM bitcell design
  • Process integration
  • SWR/DOE (experiments) definition and generation
  • Test structure definition
  • Characterization
  • Data analysis
  • Design rule generation
  • Process control document generation
  • Device characterization
  • Device simulation
  • Driving SRAM yield and qualification

Benefits

  • We offer competitive pay and benefits designed to help you and your family live your best life.
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