The position involves leading the development and optimization of SiC epitaxial growth processes, focusing on thickness and doping uniformity, as well as defect reduction through process tuning. The role requires driving continuous improvement initiatives across epitaxy platforms and leading R&D projects, including internal qualification efforts and facilitating seamless process transfer from R&D to production. Collaboration with substrate and epitaxy teams is essential to establish correlations and enhance Epi quality. The candidate will also interface with external vendors to identify and implement solutions aligned with product timelines and performance goals. Additionally, the role includes preparing technical reports and presentations, contributing to external publications, and participating in conferences.
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Industry
Computer and Electronic Product Manufacturing
Education Level
Ph.D. or professional degree