Principal Design Engineer

Coherent • Fremont, CA

3d • Onsite

About The Position

The world’s communications infrastructure depends on semiconductor lasers, and particularly those based on indium phosphide technology. Indium phosphide lasers are engineered to emit at wavelengths that are optimal for long-distance transmission through fiber optics. In short, they enable the optical networks that form the global internet. Coherent’s broad portfolio of InP components includes application-specific Fabry-Pérot lasers, directly modulated lasers (DMLs), and tunable lasers. It also includes photodiodes for high-speed receivers and power monitoring. In 2022, we introduced 200 Gbps indium phosphide electro-absorption modulated lasers (EMLs) for high-speed datacenter transceivers. This design provides our customers with the most advanced, robust, and cost-competitive laser devices for their 800G and next-gen 1.6T datacom transceiver designs. Our world-class and highly reliable InP technology platform is one of the very few in the industry that has been proven, with more than one hundred million lasers in the field deployed over the last decades. The Principal Design Engineer will be responsible for designing and developing high-speed, high-sensitivity InGaAs/InP photodiodes to support next-generation high-speed optical transceivers. This role focuses on advancing photodiode performance to meet the growing demands of high-speed optical communication systems. We are seeking an experienced photodiode design engineer with expertise in high-speed, high-sensitivity device development and a passion for innovation in next-generation optoelectronic products. If you are excited about advancing cutting-edge photonic technologies, we invite you to join our team in Fremont, California.

Requirements

• PhD with 10+ years of relevant experience
• Optoelectronic device design and simulation
• Photodiode epi materials growth, development and quality control
• Photodiode wafer front process and backend process.
• Photodiode test and characterization.
• Photodiode reliability qualification.
• Lead the architectural designs of high-speed and high-sensitive InGaAs / InP photodiodes
• Design high-speed and high-sensitive photodiode epi structures
• Design both front- and back-end wafer process flows
• Support and Perform device characterization
• Support product qualification and release

Responsibilities

• Lead the design and product development of high-speed and high-sensitive InGaAs /InP photodiodes
• Work with epitaxial and process engineers to define the device structure and process.
• Coordinate with test and reliability engineers to arrange performance and reliability testing.
• Working closely with internal fab facility and external vendors to advance cutting edge manufacturing technologies.

What This Job Offers

• Job Type: Full-time
• Career Level: Principal
• Education Level: Ph.D. or professional degree
• Number of Employees: 5,001-10,000 employees