Principal Design Engineer, NVEG

Micron Technology • San Jose, CA

9d

About The Position

Our vision is to transform how the world uses information to enrich life for all.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
The Principal Design Engineer in Micron’s NVEG organization contributes to the development of new memory products by assisting with the overall design, layout, and optimization of datapath circuits for NAND flash memory! This position will drive task forces and make strategic decisions on major datapath architectural changes influenced by new design specs such as higher speed/lower power. They will assess pros and cons of new architecture and drive all activities pertaining its implementation. The role will be expected to lead technical datapath design projects, advising the design planning, layout, and validation activities according to project timelines!
What’s Encouraged Daily:
Design and optimize TSV(Through-Silicon Via) interface circuits connecting memory die to logic die including Rx/Tx circuit for internal TSV channels, impedance matching and timing margin analysis.
Develop and characterize TSV electrical models and define circuit design constraints for datapath interface.
Define and implement signal integrity requirements for the TSV channel, including eye margin, crosstalk, and noise budget analysis
Define and implement power integrity requirements using TSV for highly parallel IO and array operations
Design and verify TSV-specific DFT (Design for Testability) circuits including loopback test modes, TSV continuity checks, and lane redundancy/remapping logic
Collaborate with process technology and DTCO teams to optimize TSV design rules, standard cell usage, and layout strategies for the internal datapath
Develop and implement functional verification plan for TSV interface and internal parallel bus including full chip circuit simulation and Verilog regression
Design and optimize the wide internal parallel data bus spanning multiple arrays, channels and pseudo-channels, ensuring timing closure and signal integrity across the full parallel bus
Architect the data path from the page buffer through data line sense amplifier, redundancy logic, and bus driver to the TSV output interface, managing parallelism across bank groups and banks.
Develop clocking and synchronization strategies for the highly parallel internal bus including wave pipeline design, clock distribution, and skew management
Implement and optimize column redundancy and lane repair schemes compatible with HBM like highly parallel bus architecture
Define timing budgets and perform timing analysis across the full internal datapath under PVT variations
Support post-silicon validation, debug and correlation activities; identify schematic edits and drive vital tape-out revisions.
Collaborate with packaging and assembly teams to ensure TSV reliability constraints are met within the datapath floorplan
Collaborate with project integration and other functional teams in design on specifications of major block interfaces
Work with PE to drive silicon experiments and propose fixes and improvements for yield improvement and silicon debugging.
Communicate with Apps regarding introduction of new specs and limitations based on design requirements and limitations.
Document and review final results with experts and collaborators

Requirements

• BS or MS in Electrical Engineering with 8+ years of relevant experience in memory circuit design, preferably in DRAM, NAND or other high-density memory technologies.
• Experience with TSV(Through-Silicon Via) interface circuit design or high-speed memory interface design(NV-LPDDR4, DDR4/5, LPDDR5/6, HBM3/3E/4), including timing analysis, parasitic modeling, and signal integrity.
• Strong knowledge and understanding of highly parallel bus performance, power and area optimization including clock distribution and skew management across wide data paths, and EpB(Energy per Bit) optimization in the context of 3D-stacked memory architectures.
• Experience managing sophisticated circuit design projects spanning multiple functional blocks and multi-functional teams, with the ability to effectively communicate design trade-offs, schedule progress, and technical outcomes to both design and non-design customers

Nice To Haves

• Hands on experience in applying AI to improve quality of design and efficiency
• Experience on chip level PDN optimization
• Comprehensive understanding on CMOS device and device reliability
• Comprehensive understanding on CMOS BSIM model and CMOS target for high speed IO operation
• Experience with signal/power integrity, power delivery network design, physical design

Responsibilities

• Design and optimize TSV(Through-Silicon Via) interface circuits connecting memory die to logic die including Rx/Tx circuit for internal TSV channels, impedance matching and timing margin analysis.
• Develop and characterize TSV electrical models and define circuit design constraints for datapath interface.
• Define and implement signal integrity requirements for the TSV channel, including eye margin, crosstalk, and noise budget analysis
• Define and implement power integrity requirements using TSV for highly parallel IO and array operations
• Design and verify TSV-specific DFT (Design for Testability) circuits including loopback test modes, TSV continuity checks, and lane redundancy/remapping logic
• Collaborate with process technology and DTCO teams to optimize TSV design rules, standard cell usage, and layout strategies for the internal datapath
• Develop and implement functional verification plan for TSV interface and internal parallel bus including full chip circuit simulation and Verilog regression
• Design and optimize the wide internal parallel data bus spanning multiple arrays, channels and pseudo-channels, ensuring timing closure and signal integrity across the full parallel bus
• Architect the data path from the page buffer through data line sense amplifier, redundancy logic, and bus driver to the TSV output interface, managing parallelism across bank groups and banks.
• Develop clocking and synchronization strategies for the highly parallel internal bus including wave pipeline design, clock distribution, and skew management
• Implement and optimize column redundancy and lane repair schemes compatible with HBM like highly parallel bus architecture
• Define timing budgets and perform timing analysis across the full internal datapath under PVT variations
• Support post-silicon validation, debug and correlation activities; identify schematic edits and drive vital tape-out revisions.
• Collaborate with packaging and assembly teams to ensure TSV reliability constraints are met within the datapath floorplan
• Collaborate with project integration and other functional teams in design on specifications of major block interfaces
• Work with PE to drive silicon experiments and propose fixes and improvements for yield improvement and silicon debugging.
• Communicate with Apps regarding introduction of new specs and limitations based on design requirements and limitations.
• Document and review final results with experts and collaborators

Benefits

• Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future.
• We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.
• Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave.
• Additionally, Micron benefits include a robust paid time-off program and paid holidays.

What This Job Offers

• Job Type: Full-time
• Career Level: Principal
• Number of Employees: 5,001-10,000 employees