In this position, the individual will be responsible for development of the future generation of 3D NAND flash. The individual will contribute to defining new device architectures, developing scaling paths, process improvement and novel device operating strategy for cutting edge memory technologies. The scope includes development of new types of device, design and process architectures involving novel materials, structures and operating algorithm to deliver industry leadership in performance, reliability, power and cost. The individual will be responsible for understanding the existing technology limitation from first principle and creating innovative idea to solve problems.
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Job Type
Full-time
Career Level
Entry Level
Education Level
Ph.D. or professional degree
Number of Employees
5,001-10,000 employees