Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Lead Cell Engineer in the R&D DRAM Device and Cell Technology Group at Micron, you will play a critical technical leadership role in advancing future DRAM scaling in an industry leading 300mm R&D facility. You will lead the cell development including but not limited to improving cell performance, electrical characterization, modeling, and reliability at single cell and array level. You will define and own key electrical specifications, guide experimental strategy, and influence process, material, and design decisions through deep device physics expertise. You are expected to act as a technical authority within the team, mentoring engineers and collaborating extensively with material, process integration, design, modeling, characterization, and product organizations to shape technology roadmaps and resolve complex cross disciplinary challenges. This is a highly collaborative, high impact role for a technologist ready to lead innovation in advanced memory devices! Are you ready for the challenge?
Stand Out From the Crowd
Upload your resume and get instant feedback on how well it matches this job.
Job Type
Full-time
Career Level
Mid Level
Number of Employees
5,001-10,000 employees