Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The Heterogeneous Integration Group (HIG) at Micron is shaping the future of AI and accelerated computing by developing advanced memory solutions. The team focuses on designing and optimizing High Bandwidth Memory (HBM) products for AI/ML, high-performance computing (HPC), and data-centric systems, collaborating across global engineering and product teams to deliver industry-leading performance, power efficiency, and reliability. As an HBM Design Engineering Intern, you will contribute to the design, simulation, and optimization of digital and analog circuits for NextGen HBM products. You’ll work with cross-functional teams to translate architectural concepts into manufacturable silicon, applying data-driven methods and automation to improve performance, yield, and time-to-market.
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Career Level
Intern
Education Level
Bachelor's degree
Number of Employees
5,001-10,000 employees