Intern - DRAM Device

Micron Technology • Boise, ID

425d

About The Position

As a DRAM Intern at Micron Technology, you will engage in solving DRAM cell and device problems while collaborating with a cross-functional team. This role is designed for candidates pursuing a Master's or PhD in materials science, electrical engineering, or physics, and it emphasizes the importance of understanding solid-state physics and device operation in memory systems.

Requirements

• Strong understanding of solid-state physics including semiconductors, transition metal oxides, chalcogenides, metallurgy, and ionic materials systems.
• Strong understanding of analytic and electrical methods for characterizing materials.
• Understanding of device operation in memory systems including NAND, DRAM, PCM, storage class, and cross-point memories.
• Working towards completion of Master's or PhD in materials science, electrical engineering, or physics.

Responsibilities

• Work within a cross-functional team consisting of process engineers, material scientists, electrical characterization engineers, and materials analysts.
• Coordinate experimental design and analysis of DRAM material systems.
• Investigate fundamental physics and solid-state chemistry related to DRAM devices and determine operation and failure mechanisms.
• Improve device operation from fundamental principles by studying transport mechanisms in device materials and variability sources.

Benefits

• Choice of medical, dental, and vision plans.
• Income protection programs for illness or injury.
• Paid family leave.
• Robust paid time-off program.
• Paid holidays.

What This Job Offers

• Job Type: Full-time
• Career Level: Intern
• Industry: Computer and Electronic Product Manufacturing
• Education Level: Master's degree