Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron's Advanced DRAM Device Technology Group is focused on enabling future memory scaling through cutting-edge research and development. Located in our industry-leading 300mm R&D facility, the team works on Planar and 3D DRAM technologies, collaborating across material, process, design, modeling, characterization, and product engineering groups. As a Device Engineer intern you will be responsible for the characterization and data analysis of new memory, analyzing electrical failures, improvement of yield and of overall cell performance. In addition to a broad basis of Device knowledge, you will have a deep understanding of Semiconductor Device Physics including CMOS, bipolar, diodes, etc. You'll interact significantly with material, process, design, modeling, characterization and product groups, and will provide project status updates to the team and management at a regular cadence.
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Career Level
Intern
Industry
Computer and Electronic Product Manufacturing
Education Level
Ph.D. or professional degree
Number of Employees
5,001-10,000 employees