This process integration engineer position is focused on development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's advanced technology development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. Experience in development of GaN devices for normally-off operation is desired. The scope of the job includes, but not limited to: GaN device simulations (TCAD), device design, layout Fabrication flow development and characterization of GaN devices Collaboration with fab/manufacturing engineers to ensure device manufacturability Collaboration with reliability engineers to meet device reliability requirements Failure root-cause investigation for device/process/reliability/yield improvements.