Engineer II-Process

Microchip • Chandler, AZ

25d • Onsite

About The Position

Entry level power device process engineer will become part of cross-functional team of experts to develop state-of-the-art radiation-hard Silicon Power MOSFET development. She/he will be contributing to new generations of power technologies. The successful candidate should be able to conceive new device designs based on specifications derived from application end users. The person must be a self-starter and perform diverse tasks ranging from next generation Power MOSFET device design, TCAD simulation, semiconductor process integration, data analysis to failure analysis as needed in technology development. She/he will also provide technical guidance in product sustaining activities. This position offers an excellent opportunity to learn and contribute to the power device development ecosystem. Position is based in Chandler AZ and requires US citizenship. This position will be filled to start spring 2026.

Requirements

• Entry level engineer with Masters in EE/solid-state device physics.
• Fundamental knowledge of power semiconductors devices such as trench
• 0-3 years experience MOSFETs, vertical DMOS, lateral FETs, IGBTs, Schottky and PiN diodes etc.
• Firm understanding on technology trade-offs and typical device characteristics such as Rdson, efficiency, gate charge, packing density etc.
• Proficiency in semiconductor die design/layout and advanced TCAD tools (Synopsys/Silvaco or similar)
• Experience in data analysis and trouble-shooting device issues arising during technology development
• Expertise in designing and analyzing complex DOEs
• Hands-on experience with advanced electrical characterization tools such as B1500, HP4156, LCR meter etc.
• Ability to work in a culturally, generationally, and geographically diverse team.
• Excellent communication skills including report writing, and presentation skills are a must.
• This job requires access to technology, materials, software or hardware that is controlled by the export laws of the United States. Candidates are required to provide proof of either US citizenship, Permanent US residency or classification as a protected individual as defined in 8 USC 1324b (a) (3).

Responsibilities

• new generation Power MOSFET device design
• TCAD simulation
• semiconductor process integration
• data analysis
• failure analysis as needed in technology development
• provide technical guidance in product sustaining activities

Benefits

• We offer a total compensation package that ranks among the best in the industry. It consists of competitive base pay, restricted stock units, and quarterly bonus payments. In addition to these components, our package includes health benefits that begin day one, retirement savings plans, and an industry leading ESPP program with a 2 year look back feature.
• Benefits of working at Microchip

What This Job Offers

• Job Type: Full-time
• Career Level: Entry Level
• Number of Employees: 5,001-10,000 employees