Analog IC Design Engineering Intern (GaN Devices)

Texas Instruments • Dallas, TX

2d

About The Position

We can’t predict what the future holds, but we know Texas Instruments will have a part in shaping it. At TI, device engineers focus deeply on understanding the technical needs, and future trends of an industry or end equipment, then create new products and innovative forward-looking product roadmaps to solve them. Device Engineers are an integral part each phase of new product development at TI. In the early stages of product development, device engineers interface with key stakeholders (customer decision-makers, application engineers, marketing, management, sales, IC design engineers, technology development) to negotiate specifications, perform trade-offs, understand the competitive landscape, and ultimately develop detailed technical definitions for new products. They then collaborate with the full IC development team (design, applications, test, product engineers) to deliver products to the market which are compelling, competitive, cost-conscious, manufacturable, and importantly, successful in growing TI’s business. In this GaN device engineering intern role, you’ll have the chance to: Develop advanced analog and power products Participate in advanced GaN power device and IC design Interface directly with TI business units to define product roadmaps Evaluate silicon and systems solutions (hardware and software) and related documentation Gather user requirements, translate them to functional specifications, and implement solutions and enhancement projects Provide complete documentation for each development lifecycle step Perform troubleshooting and debugging on issues related to the system Analyze key end-equipment in automotive, industrial, consumer and computing spaces to identify future trends, identifying opportunities for improving performance and adding value to these systems Put your talent to work with us as a GaN device engineering intern at the corporate research lab Kilby Labs in TI – change the world, love your job!

Requirements

• Currently pursuing a graduate degree in Electrical Engineering, Computer Engineering, Electrical and Computer Engineering or related field
• Cumulative 3.0/4.0 GPA or higher

Nice To Haves

• Knowledge in fundamentals of III-N materials, device physics, and reliability
• Knowledge of GaN epitaxy process techniques (e.g., MOCVD and MBE, etc.)
• Knowledge of GaN epi material characterization.
• Knowledge of device fabrication process and flow
• Understanding of and experience with GaN device simulations (TCAD), device design, and layout
• Understanding of and experience with device characterization at on-wafer levels (I-V, C-V, etc.)
• Excellent data analysis skills
• Strong verbal and written communication skills to audiences of varied background
• Ability to simplify complex problems and navigate uncertainty
• Demonstrated strong interpersonal, analytical and problem-solving skills
• Ability to work in teams and collaborate effectively with people in different functions
• Ability to take the initiative and drive for results
• Strong time management skills that enable on-time project delivery

Responsibilities

• Develop advanced analog and power products
• Participate in advanced GaN power device and IC design
• Interface directly with TI business units to define product roadmaps
• Evaluate silicon and systems solutions (hardware and software) and related documentation
• Gather user requirements, translate them to functional specifications, and implement solutions and enhancement projects
• Provide complete documentation for each development lifecycle step
• Perform troubleshooting and debugging on issues related to the system
• Analyze key end-equipment in automotive, industrial, consumer and computing spaces to identify future trends, identifying opportunities for improving performance and adding value to these systems

What This Job Offers

• Career Level: Intern
• Number of Employees: 5,001-10,000 employees